Search results for "Schottky barriers"

showing 3 items of 3 documents

Behaviour of Nb2O5/PPy contacts: From Schottky barriers to p-n junctions

2009

In this work, a study of the photoelectrochemical responses of Nb O /PPy contacts fabricated in both organic 2 5 and aqueous solutions is performed. From the comparison between the experimental data of PPy photodeposited on Nb O in organic and in aqueous solutions, it is evident that the medium used for the photodeposition 2 5 influences the absorption coefficient, the band gap and flat band potential values.

Conductive polymerAqueous solutionMaterials scienceBand gapPhotoconductivityPhotoelectrochemistryAnalytical chemistrySchottky diodePolypyrrolePolypyrrole Nb O thin films Schottky barriers p-n junctions.chemistry.chemical_compoundchemistryElectronic engineeringThin film2009 3rd ICTON Mediterranean Winter Conference (ICTON-MW)
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Effect of temperature–bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors

2016

The transfer characteristics (ID-VG) of multilayers MoS2 transistors with a SiO2/Si backgate and Ni source/drain contacts have been measured on as-prepared devices and after annealing at different temperatures (T-ann from 150 degrees C to 200 degrees C) under a positive bias ramp (V-G from 0 V to + 20 V). Larger T-ann resulted in a reduced hysteresis of the ID-VG curves (from similar to 11 V in the as-prepared sample to similar to 2.5 V after Tann at 200 degrees C). The field effect mobility (similar to 30 cm(2) V-1 s(-1)) remained almost unchanged after the annealing. On the contrary, the subthreshold characteristics changed from the common n-type behaviour in the as-prepared device to the…

Materials scienceAnnealing (metallurgy)Schottky barriermultilayersField effect02 engineering and technologyElectron01 natural scienceslaw.inventionlaw0103 physical sciencesGeneral Materials ScienceSchottky barrier010302 applied physicsCondensed matter physicsSubthreshold conductionmultilayerTransistorSettore FIS/01 - Fisica Sperimentale021001 nanoscience & nanotechnologyCondensed Matter PhysicsSchottky barrierstransistorField-effect transistorPositive biasannealingtransistorsMaterials Science (all)0210 nano-technologyMoS2
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Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

2017

Electrical properties of Bi2S3nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

Materials scienceArticle SubjectSchottky barrierNanowireSemiconductor nanowiresBi2S3 nanowires02 engineering and technologyFunctional devices010402 general chemistry01 natural sciencesAdsorptionlcsh:Technology (General)MoleculeGeneral Materials ScienceRelative humidityInert gasNanowiresfood and beveragesHumiditySchottky diode021001 nanoscience & nanotechnologyhumanitiesDynamic sensing dependencySchottky barriers0104 chemical sciencesChemical physicslcsh:T1-9950210 nano-technologyJournal of Nanomaterials
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